DEVITRIFICATION OF STEAM-GROWN SILICON DIOXIDE FILMS

被引：21

作者：

MEEK, RL

BRAUN, RH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 11期

关键词：

D O I：

10.1149/1.2404039

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1538 / &

共 45 条

[1]

ARCHER RJ, 1968, ELLIPSOMETRY

[2]

BALYAGIN IE, 1963, SOV PHYS CRYST, V7, P746

[3] FLAME EMISSION ANALYSIS FOR SODIUM IN SILICON OXIDE FILMS AND ON SILICON SURFACES [J].

BARRY, JE ;

DONEGA, HM ;

BURGESS, TE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) :257-&

[4] THE OXIDATION OF SILICON AT HIGH TEMPERATURES [J].

BRODSKY, MB ;

CUBICCIOTTI, D .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (07) :3497-3499

[5]

Bruckner R., 1970, Journal of Non-Crystalline Solids, V5, P123, DOI 10.1016/0022-3093(70)90190-0

[6] STUDIES OF SODIUM IN SIO2 FILMS BY NEUTRON ACTIVATION AND RADIOTRACER TECHNIQUES [J].

BUCK, TM ;

ALLEN, FG ;

DALTON, JV ;

STRUTHERS, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) :862-+

[7]

Burger R M, 1967, FUNDAMENTALS SILICON, V1

[8] THERMAL DIFFUSION OF SODIUM IN SILICON NITRIDE SHIELDED SILICON OXIDE FILMS [J].

BURGESS, TE ;

BAUM, JC ;

FOWKES, FM ;

HOLMSTROM, R ;

SHIRN, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :1005-+

[9] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].

CHOU, NJ ;

ELDRIDGE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+

[10]

Condon E. U., 1958, HDB PHYSICS, P6

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