HEAVY OXYNITRIDATION TECHNOLOGY FOR FORMING HIGHLY RELIABLE FLASH-TYPE EEPROM TUNNEL OXIDE-FILMS

被引：5

作者：

FUKUDA, H

UCHIYAMA, A

KURAMOCHI, T

HAYASHI, T

IWABUCHI, T

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., Hachioji, Tokyo 193

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 19期

关键词：

ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY; METAL OXIDE SEMICONDUCTOR STRUCTURES; SILICON; INSULATING MATERIALS AND INSULATORS;

D O I：

10.1049/el:19921136

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, it is demonstrated that in flash-type EEPROMs, the endurance properties are dramatically improved by heavy oxynitridation (RTONO) of the tunnel oxide. The layer composition evaluated by SIMS measurement indicates that large amounts of N atoms (> 10(20) atom/cm3) pile up at the SiO2/Si interface, and are distributed in the bulk SiO2. In addition, the RTONO film reduces the number of hydrogen atoms, which are the origin of electron traps. This oxynitridation causes a decrease of both electron and hole traps in the tunnel oxide, resulting in an improvement of the threshold voltage narrowing.

引用

页码：1781 / 1783

页数：3

共 10 条

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