ZEEMAN SPLITTING OF THE EXCITONIC RECOMBINATION IN INXGA1-XAS/GAAS SINGLE QUANTUM-WELLS

被引：58

作者：

WIMBAUER, T ^{[1
]}

OETTINGER, K ^{[1
]}

EFROS, AL ^{[1
]}

MEYER, BK ^{[1
]}

BRUGGER, H ^{[1
]}

机构：

[1] DAIMLER BENZ AG,RES CTR ULM,D-89013 ULM,GERMANY

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.50.8889

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report magnetoluminescence investigations of undoped InxGa1-xAs/GaAs single quantum wells. At the highest available magnetic fields (11 T) the excitonic recombination shows well resolved spin splittings. For low indium content the splitting is dominated by the heavy-hole valence-band splitting as confirmed experimentally. The theoretical analysis allows us to determine the electron as well as the heavy-hole g values in InxGa1-xAs on GaAs within the composition range 0 < x < 0.27 for quantum well thicknesses L(z) > 120 Angstrom.

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页码：8889 / 8892

页数：4

相关论文

共 26 条

[1]

Abragam A., 1970, ELECT PARAMAGNETIC R

[2] THEORY OF OSCILLATORY G-FACTOR IN AN MOS INVERSION LAYER UNDER STRONG MAGNETIC-FIELDS [J].

ANDO, T ;

UEMURA, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 37 (04) :1044-1052

[3] DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS [J].

ANDO, T .

PHYSICAL REVIEW B, 1976, 13 (08) :3468-3477

[4] ELECTRON-SPIN RESONANCE OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GA0.47IN0.53AS-INP HETEROSTRUCTURES [J].

DOBERS, M ;

VIEREN, JP ;

GULDNER, Y ;

BOVE, P ;

OMNES, F ;

RAZEGHI, M .

PHYSICAL REVIEW B, 1989, 40 (11) :8075-8078

[5]

EFROS AIL, 1991, IOP C P, V123, P329

[6] ELECTRICAL TRANSPORT OF HOLES IN GAAS/INGAAS/GAAS SINGLE STRAINED QUANTUM-WELLS [J].

FRITZ, IJ ;

DRUMMOND, TJ ;

OSBOURN, GC ;

SCHIRBER, JE ;

JONES, ED .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1678-1680

[7] THEORETICAL FORMALISM TO UNDERSTAND THE ROLE OF STRAIN IN THE TAILORING OF HOLE MASSES IN P-TYPE INXGA1-XAS (ON GAAS SUBSTRATES) AND IN0.53+XGA0.47-XAS (ON INP SUBSTRATES) MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

JAFFE, M ;

SEKIGUCHI, Y ;

SINGH, J .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1943-1945

[8] G FACTOR OF 2-DIMENSIONAL INTERACTING ELECTRON GAS [J].

JANAK, JF .

PHYSICAL REVIEW, 1969, 178 (03) :1416-&

[9] VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].

LAWAETZ, P .

PHYSICAL REVIEW B, 1971, 4 (10) :3460-&

[10] EXTREME G-FACTOR ANISOTROPY INDUCED BY STRAIN [J].

LIN, SY ;

WEI, HP ;

TSUI, DC ;

KLEM, JF ;

ALLEN, SJ .

PHYSICAL REVIEW B, 1991, 43 (14) :12110-12113