ERASE MODEL IN DOUBLE POLY-SI GATE N-CHANNEL FAMOS DEVICES

被引：6

作者：

KONDO, R

TAKEDA, E

HAGIWARA, T

HORIUCHI, M

ITOH, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 03期

关键词：

D O I：

10.1109/T-ED.1978.19083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：369 / 374

页数：6

共 9 条

[1]

BARNES J, 1976, IEDM, V8, P173

[2] FAMOS - NEW SEMICONDUCTOR CHARGE STORAGE DEVICE [J].

FROHMANB.D .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :517-&

[3]

FROHMANBENTCHKO.D, 1971, ISSCC, P80

[4]

HAGIWARA T, 1976, 8TH P C SOL STAT DEV, V3, P211

[5]

Heavens O.S, 1955, OPTICAL PROPERTIES T

[6] ELECTRICALLY ALTERABLE AVALANCHE-INJECTION-TYPE MOS READ-ONLY MEMORY WITH STACKED-GATE STRUCTURE [J].

IIZUKA, H ;

MASUOKA, F ;

SATO, T ;

ISHIKAWA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :379-387

[7]

MASUOKA F, 1974, Patent No. 3825945

[8] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV [J].

PHILIPP, HR ;

TAFT, EA .

PHYSICAL REVIEW, 1960, 120 (01) :37-38

[9] DETERMINATION OF OPTICAL CONSTANTS FROM REFLECTANCE OR TRANSMITTANCE MEASUREMENTS ON BULK CRYSTALS OR THIN FILMS [J].

VERLEUR, HW .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1968, 58 (10) :1356-&

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