VERTICAL CAVITY SURFACE-EMITTING SEMICONDUCTOR-LASER WITH CW INJECTION-LASER PUMPING

被引：7

作者：

MCDANIEL, DL

MCINERNEY, JG

RAJA, MYA

SCHAUS, CF

BRUECK, SRJ

机构：

[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,DEPT MAT & ASTRON,ALBUQUERQUE,NM 87131

[2] UNIV NEW MEXICO,DEPT ELECT & COMP ENGN,ALBUQUERQUE,NM 87131

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 03期

关键词：

D O I：

10.1109/68.50873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report room temperature CW operation of a GaAs/ AIGaAs vertical cavity surface-emitting laser with a resonant periodic gain medium, using a GaAs/AlGaAs diode laser array as a pump source. Pumping thresholds as low as 11 mW at 730 nm. output powers as high as 10 mW at 856 nm, and external quantum efficiencies as high as 70% were obtained, with considerably improved temporal and spatial coherence properties compared to the pump laser. This is the first reported operation of such a laser with an efficient, compact pump source, demonstrating its suitability for efficient integration. © 1990 IEEE

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页码：156 / 158

页数：3

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