A SEMIEMPIRICAL MODEL OF SURFACE SCATTERING FOR MONTE-CARLO SIMULATION OF SILICON N-MOSFETS

被引：54

作者：

SANGIORGI, E ^{[1
]}

PINTO, MR ^{[1
]}

机构：

[1] AT&T BELL LABS,SILICON ELECTR RES LAB,TECH STAFF,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 02期

关键词：

D O I：

10.1109/16.121694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A semi-empirical model of surface scattering for Monte Carlo simulation of electrons in the silicon inversion layer at 300 K is proposed. The model compares favorably with different sets of experimental electron effective mobility data over a wide range of normal electric fields, channel impurity concentrations, and substrate bias. Comparisons between Monte Carlo and drift-diffusion simulations show that the model is able to correctly predict the device termination currents in the regime where nonequilibrium transport effects are negligible. It is expected therefore that at small device lengths the Monte Carlo predictions are also quantitatively correct.

引用

页码：356 / 361

页数：6

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