A MANY-BAND SILICON MODEL FOR HOT-ELECTRON TRANSPORT AT HIGH-ENERGIES

被引：67

作者：

BRUNETTI, R ^{[1
]}

JACOBONI, C ^{[1
]}

VENTURI, F ^{[1
]}

SANGIORGI, E ^{[1
]}

RICCO, B ^{[1
]}

机构：

[1] UNIV BOLOGNA,DEIS,I-40126 BOLOGNA,ITALY

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90291-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1663 / 1667

页数：5

共 8 条

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[7] MOS2 - AN EFFICIENT MONTE-CARLO SIMULATOR FOR MOS DEVICES [J].

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[8]

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