ELECTRIC-FIELD EFFECTS ON YBA2CU3O7-DELTA GRAIN-BOUNDARY JOSEPHSON-JUNCTIONS

被引：4

作者：

NAKAJIMA, K

YOKOTA, K

CHEN, J

MYOREN, H

YAMASHITA, T

机构：

[1] Research Institute of Electrical Communication, Tohoku University, Sendai

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 7A期

关键词：

HIGH-T(C) OXIDE SUPERCONDUCTOR; ELECTRIC FIELD EFFECT; BICRYSTAL GRAIN BOUNDARY; JOSEPHSON JUNCTION; YBA2CU3O7-DELTA FILM; SUPERCONDUCTING FIELD-EFFECT TRANSISTOR (SUFET);

D O I：

10.1143/JJAP.33.L934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Various effects of the electric field on YBa2Cu3O7-delta grain boundary Josephson junctions were studied using inverted metal-insulator-superconductor (MIS) samples which employed bicrystal SrTiO3 substrates as insulators. The critical currents, I(c) of the junctions were regulated by gate voltages with the field-induced changes in charge carrier densities. Furthermore, a significant field eff ect on equidistant step structures observed in I-V curves was found. The equidistant steps can be ascribed to self-resonances of the ac Josephson current in the grain boundary junctions. The gate voltages shifted the step voltages corresponding to resonance frequencies of the grain boundary toward high voltages. This appears to be a consequence of the field dependence of dielectric properties of grain boundary junctions.

引用

页码：L934 / L937

页数：4

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