BACKSCATTERING MEASUREMENTS OF TEMPERATURE-DEPENDENCE OF IRRADIATION-INDUCED DISPLACEMENT OF AS AND SB ATOMS IN SI CRYSTALS

被引：16

作者：

SWANSON, ML ^{[1
]}

DAVIES, JA ^{[1
]}

QUENNEVILLE, AF ^{[1
]}

SARIS, FW ^{[1
]}

WIGGERS, LW ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,AMSTERDAM,NETHERLANDS

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 35卷 / 1-2期

关键词：

BACKSCATTERING MEASUREMENT;

D O I：

10.1080/00337577808238807

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The temperature dependence of the irradiation-induced displacement of As and Sb atoms into diffused crystals of Si-0. 1% As, Si-0. 4% As and Si-0. 1% Sb has been studied by backscattering of 1-2 MeV He** plus ions. The maximum displaced fraction and the initial displacement rate varied with irradiation temperature, reaching a maximum at approximately 420 K for the Si-0. 1% As crystal. The displaced fractions of As and Sb atoms were reduced by irradiation at 30 K after initial irradiation at 293 K. The results indicate that the solute atom displacement was cuased by the trapping of several vacancies at each solute atom.

引用

页码：51 / 59

页数：9

共 49 条

[1]

Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561

[2] ELECTRON-IRRADIATION DAMAGE IN SILICON CONTAINING HIGH-CONCENTRATIONS OF BORON [J].