CONDUCTION-BAND OFFSET IN STRAINED AL0.15GA0.85AS/IN0.15GA0.85AS/GAAS PSEUDOMORPHIC STRUCTURES

被引：14

作者：

LIN, SY ^{[1
]}

TSUI, DC ^{[1
]}

LEE, H ^{[1
]}

ACKLEY, D ^{[1
]}

机构：

[1] SIEMENS RES & TECHNOL,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 21期

关键词：

D O I：

10.1063/1.102063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2211 / 2213

页数：3

共 22 条

[1] BAND EDGE OFFSETS IN STRAINED (INGA)AS-(ALGA)AS HETEROSTRUCTURES
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[2] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1237 - 1239
[3] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION
BATEY, J
WRIGHT, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 200 - 209
[4] CASEY HC, 1978, HETEROSTRUCTURE LA A
[5] QUANTUM-WELL PARA-CHANNEL ALGAAS/INGAAS/GAAS HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS WITH VERY HIGH TRANSCONDUCTANCE
DANIELS, RR
RUDEN, PP
SHUR, M
GRIDER, D
NOHAVA, TE
ARCH, DK
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (07) : 355 - 357
[6] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[7] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
GOETZ, KH
BIMBERG, D
JURGENSEN, H
SELDERS, J
SOLOMONOV, AV
GLINSKII, GF
RAZEGHI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4543 - 4552
[8] OPTICAL STUDIES OF INXGA1-XAS/GAAS STRAINED-LAYER QUANTUM WELLS
HUANG, KF
TAI, K
CHU, SNG
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (20) : 2026 - 2028
[9] OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS
JI, G
HUANG, D
REDDY, UK
HENDERSON, TS
HOUDRE, R
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3366 - 3373
[10] STRAINED-LAYER INGAAS-GAAS-ALGAAS PHOTOPUMPED AND CURRENT INJECTION-LASERS
KOLBAS, RM
ANDERSON, NG
LAIDIG, WD
SIN, YK
LO, YC
HSIEH, KY
YANG, YJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) : 1605 - 1613

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