THIN-FILM MIS SURFACE PHOTODIODE

被引：7

作者：

LILE, DL

WIEDER, HH

机构：

来源：

THIN SOLID FILMS | 1972年 / 13卷 / 01期

关键词：

D O I：

10.1016/0040-6090(72)90147-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：15 / &

共 12 条

[1] MICROZONE RECRYSTALLIZATION OF SEMICONDUCTOR COMPOUND FILMS [J].

BILLINGS, AR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :757-&

[2] PHOTOVOLTAIC EFFECT IN PHOTOCONDUCTOR-DIELECTRIC-METAL SANDWICHES [J].

FORLANI, F ;

MINNAJA, N .

PHYSICA STATUS SOLIDI, 1965, 8 (01) :177-+

[3]

FRANKL DR, 1966, SURF SCI, V6, P115

[4] INFRARED ABSORPTION AND VALENCE BAND IN INDIUM ANTIMONIDE [J].

GOBELI, GW ;

FAN, HY .

PHYSICAL REVIEW, 1960, 119 (02) :613-620

[5] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) :2550-&

[6] MEASUREMENT OF MINORITY CARRIER LIFETIMES WITH THE SURFACE PHOTOVOLTAGE [J].

JOHNSON, EO .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) :1349-1353

[7]

KRUSE PW, 1970, SEMICONDUCTORS SEMIM, V5

[8] CARRIER GENERATION RATE AND EFFECTIVE LIFETIME IN INSB THIN FILMS [J].

LILE, DL .

SOLID-STATE ELECTRONICS, 1971, 14 (09) :855-&

[9]

MOSS TS, 1959, OPTICAL PROPETIES SE

[10] INSB MOS INFRARED DETECTOR [J].

PHELAN, RJ ;

DIMMOCK, JO .

APPLIED PHYSICS LETTERS, 1967, 10 (02) :55-&

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