FABRICATION AND CHARACTERIZATION OF ONE-DIMENSIONAL HOLE GAS

被引:18
作者
TANG, YS [1 ]
WILKINSON, CDW [1 ]
TORRES, CMS [1 ]
SMITH, DW [1 ]
WHALL, TE [1 ]
PARKER, EHC [1 ]
机构
[1] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND
关键词
D O I
10.1016/0749-6036(92)90316-W
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report a study on the fabrication and optical properties of one dimensional (1D) hole gases based on a modulation doped p+-Si/SiGe heterojunction structure grown by molecular beam epitaxy. The samples, fabricated by using electron beam lithography and reactive ion etching (RIE) in SiCl4, were studied by both photoreflectance and photoluminescence at 4K which shows quasi-1D behavior when the wire width reduces to less than about 100nm. A strain relaxation process caused by RIE during the wire fabrication was also observed. © 1992.
引用
收藏
页码:535 / 537
页数:3
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