REACTIVE ION ETCHING OF POLYCRYSTALLINE SILICON USING SICL4

被引：10

作者：

TANG, YS

WILKINSON, CDW

机构：

[1] Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 25期

关键词：

D O I：

10.1063/1.104715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reactive ion etching of polycrystalline silicon using SiCl4 was used to etch 70-nm-wide structures. The etching mechanism of the process was investigated by using emission spectroscopy. It was found that the principal etchant for polycrystalline silicon is Cl2+.

引用

页码：2898 / 2900

页数：3

共 13 条

[1] Emission bands of SiCl2 and SnCl2 [J].

Asundi, RK ;

Karim, M ;

Samuel, R .

PROCEEDINGS OF THE PHYSICAL SOCIETY, 1938, 50 :581-598

[2]

CHEUNG R, 1989, J VAC SCI TECHNOL B, V7, P1472

[3] OPTICAL SPECTROSCOPIC STUDY OF MECHANISMS IN CCL4 PLASMA-ETCHING OF SI [J].

CLARKE, PE ;

FIELD, D ;

KLEMPERER, DF .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (03) :1525-1534

[4] REACTIVE ION ETCHING OF GAAS IN A CHLORINE PLASMA [J].

HU, EL ;

HOWARD, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :85-88

[5]

ONO T, 1986, J VAC SCI TECHNOL B, V4, P696, DOI 10.1116/1.583599

[6]

PEARSE RWB, 1976, IDENTIFICATION MOL S

[7] REACTIVE ION ETCHING OF GAAS, ALGAAS, AND GASB IN CL2 AND SICL4 [J].

PEARTON, SJ ;

CHAKRABARTI, UK ;

HOBSON, WS ;

KINSELLA, AP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :607-617

[8]

REEVES CM, 1987, THESIS U GLASGOW

[9]

ROWE MD, 1985, 5TH P INT C ION PLAS, P87

[10] REACTIVE ION ETCHING OF GAAS IN CCL4/H2 AND CCL4/O2 [J].

SEMURA, S ;

SAITOH, H ;

ASAKAWA, K .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3131-3135

← 1 2 →