REACTIVE ION ETCHING OF GAAS IN CCL4/H2 AND CCL4/O2

被引：24

作者：

SEMURA, S

SAITOH, H

ASAKAWA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.333311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3131 / 3135

页数：5

共 20 条

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[9] CARBON-TETRACHLORIDE PLASMA-ETCHING OF GAAS AND INP - A KINETIC-STUDY UTILIZING NONPERTURBATIVE OPTICAL TECHNIQUES [J].

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