LOW-FREQUENCY NOISE IN P+-GAAS WITH NONALLOYED CONTACTS

被引：6

作者：

CHEN, XY ^{[1
]}

LEYS, MR ^{[1
]}

RAGAY, FW ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,DEPT APPL PHYS,5600 MB EINDHOVEN,NETHERLANDS

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 07期

关键词：

GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE NOISE;

D O I：

10.1049/el:19940379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of 1/f noise were performed including and excluding the influence of the contacts formed by metallic aluminum layers (MBE) deposited on the p+-type GaAs (MBE). The results show that the MBE process can produce non-alloyed ohmic contacts free of noise. The 1/f noise of bulk p+-GaAs is characterised by alpha(latt) congruent-to 5 x 10(-4).

引用

页码：600 / 601

页数：2

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