INTERFACE STATES OF AG/(110)GAAS SCHOTTKY DIODES WITHOUT AND WITH INTERFACIAL LAYERS

被引：12

作者：

PLATEN, W

SCHMUTZLER, HJ

KOHL, D

BRAUCHLE, KA

WOLTER, K

机构：

[1] RHEIN WESTFAL TH AACHEN,RHEIN WESTFAL,INST PHYS 2,D-5100 AACHEN,FED REP GER

[2] RHEIN WESTFAL TH AACHEN,RHEIN WESTFAL,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 01期

关键词：

D O I：

10.1063/1.341466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：218 / 224

页数：7

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