EVIDENCE FOR EL6(EC-0.35EV) ACTING AS A DOMINANT RECOMBINATION CENTER IN N-TYPE HORIZONTAL BRIDGMAN GAAS

被引：77

作者：

FANG, ZQ

SCHLESINGER, TE

MILNES, AG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 11期

关键词：

D O I：

10.1063/1.338327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5047 / 5050

页数：4

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共 25 条

[1] A DEEP LEVEL TRANSIENT SPECTROSCOPY ANALYSIS OF ELECTRON AND HOLE TRAPS IN BULK-GROWN GAAS
AURET, FD
LEITCH, AWR
VERMAAK, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 158 - 163
[2] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS
CHANTRE, A
VINCENT, G
DUBOIS
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5335 - 5359
[3] VACANCY INTERACTIONS IN GAAS
DANNEFAER, S
KERR, D
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 591 - 594
[4] ELLIOT KR, 1984, SEMIINSULATING 3 5 M, P230
[5] DEEP STATES IN GAAS LEC CRYSTALS
HENINI, M
TUCK, B
PAULL, CJ
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (05) : 483 - 488
[6] HUGHES B, 1982, I PHYS C SER, V65, P57
[7] STUDY OF ELECTRON TRAPS IN N-GAAS RESULTING FROM INFRARED RAPID THERMAL ANNEALING
KUZUHARA, M
NOZAKI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3131 - 3136
[8] LAGOWSKI J, 1983, I PHYS C SER, V65, P41
[9] LIANG BW, IN PRESS J ELECTRON, V16
[10] OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT
MAKRAMEBEID, S
GAUTARD, D
DEVILLARD, P
MARTIN, GM
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 161 - 163