DEEP STATES IN GAAS LEC CRYSTALS

被引：17

作者：

HENINI, M

TUCK, B

PAULL, CJ

机构：

[1] Univ of Nottingham, Nottingham, Engl, Univ of Nottingham, Nottingham, Engl

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 05期

关键词：

DEEP LEVEL DEFECTS - DEEP STATES - ELECTRON TRAPS - GROWN-IN DEFECTS - LEC CRYSTALS;

D O I：

10.1016/0038-1101(86)90068-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：483 / 488

页数：6

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