CORRELATED TRANSMISSION ELECTRON-MICROSCOPY AND PHOTOLUMINESCENCE STUDIES OF THE SE+-ION IMPLANTATION OF A GAAS/(AL,GA)AS MULTIPLE QUANTUM WELL

被引：8

作者：

BITHELL, EG

STOBBS, WM

PHILLIPS, C

ECCLESTON, R

GWILLIAM, R

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,BLACKETT LAB,LONDON SW7 2BZ,ENGLAND

[2] UNIV SURREY,DEPT ELECTR ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.345677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study of the Se+-ion implantation and subsequent annealing of a GaAs/(Al,Ga)As multiple quantum well, characterizing the process using transmission electron microscopy, photoluminescence spectroscopy, and Monte Carlo simulation techniques. We conclude that enhanced layer interdiffusion occurs at depths several times the projected range for the Se+ implant, and that there is evidence of residual stress at similar depths.

引用

页码：1279 / 1287

页数：9

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