NEAR-IR DETECTION BY PBS-GAAS HETEROJUNCTIONS

被引：22

作者：

BERNABUCCI, F ^{[1
]}

MARGARITONDO, G ^{[1
]}

MIGLIORATO, P ^{[1
]}

PERFETTI, P ^{[1
]}

机构：

[1] CONSIGLIO NAZL RICERCHE, LAB ELETTR STATO SOLIDO, GRP NAZL STRUTT MAT, ROME 00156, ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 15卷 / 02期

关键词：

D O I：

10.1002/pssa.2210150232

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：621 / 627

页数：7

共 12 条

[1] OPTO-ELECTRIC EFFECTS IN GE-GAAS P-N HETEROJUNCTIONS
AGUSTA, B
ANDERSON, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 206 - &
[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[3] ANDERSON RL, 1971, P INT C HETEROJUNCTI, V2, P55
[4] GAAS-GAP HETEROJUNCTIONS
DAVIS, ME
ZEIDENBERGS, G
ANDERSON, RL
[J]. PHYSICA STATUS SOLIDI, 1969, 34 (01): : 385 - +
[5] ELECTRICAL PROPERTIES AND SPECTRAL RESPONSE OF PBS-GE HETEROJUNCTIONS
GUIZZETTI, G
FILIPPINI, F
REGUZZONI, E
SAMOGGIA, G
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 6 (02): : 605 - +
[6] KICINSKI F, 1948, CHEM IND-LONDON, P54
[7] PHOTOCURRENT SPECTRA OF GE-GAAS HETERO-JUNCTIONS
LOPEZ, A
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (09) : 695 - 700
[8] CONSTITUTION AND MECHANISM OF THE SELENIUM RECTIFIER PHOTOCELL
PRESTON, JS
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 202 (1071): : 449 - 466
[9] RAVICH YI, 1970, SEMICONDUCTING LEAD, P93
[10] Sharma B. L., 1970, Physica Status Solidi A, V2, pk21, DOI 10.1002/pssa.19700020127