OPTO-ELECTRIC EFFECTS IN GE-GAAS P-N HETEROJUNCTIONS

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[3] ELECTRICAL CONDUCTION AND PHOTOVOLTAIC EFFECT IN SEMICONDUCTORS WITH POSITION-DEPENDENT BAND GAPS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 1950 - &

[4] ESAKI L, 1964, APPL PHYS LETTERS, V4, P1

[5] FANG FF, 1963, P IEEE, V51, P860

[6] PHOTOCURRENT SPECTRA OF GE-GAAS HETERO-JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (09) : 695 - 700

[7] LOPEZ A, 1964, THESIS SYRACUSE U

[8] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 248 - 255

[9] REDIKER RH, 1963, P IEEE, V51, P218

[10] ROCK JC, TM646 SYR U TECH REP

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[3] ELECTRICAL CONDUCTION AND PHOTOVOLTAIC EFFECT IN SEMICONDUCTORS WITH POSITION-DEPENDENT BAND GAPS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 1950 - &

[4] ESAKI L, 1964, APPL PHYS LETTERS, V4, P1

[5] FANG FF, 1963, P IEEE, V51, P860

[6] PHOTOCURRENT SPECTRA OF GE-GAAS HETERO-JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (09) : 695 - 700

[7] LOPEZ A, 1964, THESIS SYRACUSE U

[8] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 248 - 255

[9] REDIKER RH, 1963, P IEEE, V51, P218

[10] ROCK JC, TM646 SYR U TECH REP