RESONANT TUNNELING QUANTUM-DOT DIODES - PHYSICS, LIMITATIONS, AND TECHNOLOGICAL PROSPECTS

被引：8

作者：

LUSCOMBE, JH ^{[1
]}

RANDALL, JN ^{[1
]}

BOUCHARD, AM ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,MANOELECTR GRP,TECH STAFF,DALLAS,TX 75265

来源：

PROCEEDINGS OF THE IEEE | 1991年 / 79卷 / 08期

关键词：

D O I：

10.1109/5.92071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We address the electronic structure and properties of the present generation of resonant-tunneling quantum-dot structures. Quantum dots are "zero-dimensional" semiconductor nanostructures, i.e., structures in which an electron is quantum-mechanically confined in all three spatial dimensions. Quantum dots appear to represent a viable structure to allow the continued down-scaling of critical circuit geometries beyond the currently perceived limits for conventional VLSI devices. As they are currently fabricated, however, quantum-dot diodes have impediments which prevent the full realization of their potential. We will assess these limitations and discuss measures for their solution.

引用

页码：1117 / 1130

页数：14