RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET)

被引：17

作者：

YOKOYAMA, N

IMAMURA, K

OHNISHI, H

MORI, T

MUTO, S

SHIBATOMI, A

机构：

[1] Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期

关键词：

The authors thank T. Inata; T; Fujii; and S. Hiyamizu for their support in the fields of epitaxial growth and evaluation. We also express our gratitude to T. Misugi and M. Kobayashi for their continuing encouragement. This work was supported by the MITI's Project of Basic Technology for Future Industries;

D O I：

10.1016/0038-1101(88)90345-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：577 / 582

页数：6

共 20 条

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[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4587 - 4590
[9] RESONANT TUNNELING HOT-ELECTRON TRANSISTOR WITH CURRENT GAIN OF 5
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (26) : 1779 - 1780
[10] SUBPICOSECOND BASE TRANSIT-TIME OBSERVED IN A HOT-ELECTRON TRANSISTOR (HET)
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