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OPTICAL 3RD-HARMONIC INVESTIGATIONS OF GALLIUM NITRIDE NUCLEATION LAYERS ON SAPPHIRE

被引：3
作者：
WICKENDEN, DK
KISTENMACHER, TJ
MIRAGLIOTTA, J
机构：
[1] Applied Physics Laboratory, The Johns Hopkins University, Laurel, 20723-6099, MD, Johns Hopkins Rd.
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 11期
关键词：
GALLIUM NITRIDE; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); NONLINEAR SUSCEPTIBILITY; 3RD-HARMONIC GENERATION;
D O I：
10.1007/BF02649971
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The magnitude of the chi(xxxx)((3)) element of the third-order optical susceptibility was measured in a series of wurtzite phase GaN nucleation layers (similar to 450 Angstrom) deposited on (00.1) sapphire at 540 degrees C and annealed to various temperatures up to 1050 degrees C. The nonlinear optical response exhibited a significant increase in films that were annealed to temperatures in the range of 1015 to 1050 degrees C. In addition, the correlation between the magnitude of chi(xxxx)((3)) with both the maximum value of the linear absorbance gradient and the residual homogeneous strain in the overlayer suggests that variations in the crystalline content of the film and the bonding distance between the Ga and N atoms are primary factors in determining the third-order nonlinearity in GaN.
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页码：1209 / 1214
页数：6
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