ELECTRON-DENSITY OF STATES OF CDTE

被引：22

作者：

WALL, A ^{[1
]}

GAO, Y ^{[1
]}

RAISANEN, A ^{[1
]}

FRANCIOSI, A ^{[1
]}

CHELIKOWSKY, JR ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.43.4988

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present bremsstrahlung-isochromat-spectroscopy and synchrotron-radiation photoemission-spectroscopy studies of CdTe single crystals cleaved in situ. The photoemission data, and empirical-pseudopotential calculations of the band structure, were used to reevaluate the position of valence and core spectral features. The bremsstrahlung-isochromat-spectroscopy results emphasize structure in the conduction-band density of states at 4.1, 6.7, 9.6, 11.3, 12.5, and 15 eV above the valence-band maximum. The calculations are found to reproduce the conduction-band structure throughout a range of 18 eV above the valence-band maximum.

引用

页码：4988 / 4993

页数：6

共 32 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[2] Capasso F., 1987, HETEROJUNCTION BAND
[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
[4] VALENCE-BAND AND CONDUCTION-BAND DENSITIES OF STATES FOR TETRAHEDRAL SEMICONDUCTORS - THEORY AND EXPERIMENT
CHELIKOWSKY, JR
WAGENER, TJ
WEAVER, JH
JIN, A
[J]. PHYSICAL REVIEW B, 1989, 40 (14): : 9644 - 9651
[5] COHEN ML, 1988, ELECTRONIC STRUCTURE
[6] LINEARITY (COMMUTATIVITY AND TRANSITIVITY) OF VALENCE-BAND DISCONTINUITY IN HETEROJUNCTIONS WITH TE-BASED II-VI SEMICONDUCTORS - CDTE, HGTE, AND ZNTE
DUC, TM
HSU, C
FAURIE, JP
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (11) : 1127 - 1130
[7] PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON RADIATION .1. OVERVIEWS OF VALENCE-BAND STRUCTURE FOR GE, GAAS, GAP, INSB, ZNSE, CDTE, AND AGL
EASTMAN, DE
GROBMAN, WD
FREEOUF, JL
ERBUDAK, M
[J]. PHYSICAL REVIEW B, 1974, 9 (08): : 3473 - 3488
[8] ENERGY BAND STRUCTURES OF CUBIC ZNS ZNSE ZNTE AND CDTE (KORRINGA-KOHN-ROSTOKER METHOD)
ECKELT, P
[J]. PHYSICA STATUS SOLIDI, 1967, 23 (01): : 307 - &
[9] HGTE-CDTE HETEROJUNCTION VALENCE-BAND DISCONTINUITY
FAURIE, JP
HSU, C
DUC, TM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3074 - 3078
[10] EFFECT OF DIFFERENT CATION-ANION BOND STRENGTHS ON METAL TERNARY-SEMICONDUCTOR INTERFACE FORMATION - CU/HG0.75CD0.25TE AND CU/CDTE
FRIEDMAN, DJ
CAREY, GP
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5329 - 5342

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