EFFECT OF DIFFERENT CATION-ANION BOND STRENGTHS ON METAL TERNARY-SEMICONDUCTOR INTERFACE FORMATION - CU/HG0.75CD0.25TE AND CU/CDTE

被引：26

作者：

FRIEDMAN, DJ

CAREY, GP

LINDAU, I

SPICER, WE

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.34.5329

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：5329 / 5342

页数：14

相关论文

共 38 条

[1] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
STOFFEL, NG
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841
[2] BONDING AND DIFFUSION AT AL AND AU INTERFACES WITH CDS
BRILLSON, LJ
BAUER, RS
BACHRACH, RZ
MCMENAMIN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 476 - 480
[3] ROLE OF CATION DISSOCIATION IN SCHOTTKY-BARRIER FORMATION AT II-VI COMPOUND SEMICONDUCTOR METAL INTERFACES
BRUCKER, CF
BRILLSON, LJ
[J]. THIN SOLID FILMS, 1982, 93 (1-2) : 67 - 74
[4] CAREY GP, UNPUB
[5] CHANGES IN THE LOCAL CHEMICAL-COMPOSITION DURING THE HG1-XCDXTE-AL INTERFACE FORMATION
DANIELS, RR
MARGARITONDO, G
DAVIS, GD
BYER, NE
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 50 - 52
[6] INTERACTIONS BETWEEN CLEAVED (HG, CD)TE SURFACES AND DEPOSITED OVERLAYERS OF AL AND INDIUM
DAVIS, GD
BYER, NE
RIEDEL, RA
MARGARITONDO, G
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1915 - 1921
[7] DEPOSITION OF AU OVERLAYERS ONTO CLEAVED (HG,CD)TE SURFACES
DAVIS, GD
BECK, WA
BYER, NE
DANIELS, RR
MARGARITONDO, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 546 - 550
[8] INTERFACE REACTIONS AT CU-HG1-XCDXTE CONTACTS
EHSANI, H
BENE, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2808 - 2811
[9] INTERFACE CHEMISTRY OF TERNARY SEMICONDUCTORS - LOCAL MORPHOLOGY OF THE HG1-XCDXTE(110)-CR INTERFACE
FRANCIOSI, A
PHILIP, P
PETERMAN, DJ
[J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8100 - 8107
[10] FRIEDMAN DCS, UNPUB

← 1 2 3 4 →