EFFECT OF DIFFERENT CATION-ANION BOND STRENGTHS ON METAL TERNARY-SEMICONDUCTOR INTERFACE FORMATION - CU/HG0.75CD0.25TE AND CU/CDTE

被引:26
作者
FRIEDMAN, DJ
CAREY, GP
LINDAU, I
SPICER, WE
机构
来源
PHYSICAL REVIEW B | 1986年 / 34卷 / 08期
关键词
D O I
10.1103/PhysRevB.34.5329
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5329 / 5342
页数:14
相关论文
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