BINDING-ENERGY SHIFTS FROM ALLOYING AT METAL COMPOUND-SEMICONDUCTOR INTERFACES

被引：28

作者：

NOGAMI, J ^{[1
]}

KENDELEWICZ, T ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.34.669

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：669 / 674

页数：6

共 35 条

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