ROOM-TEMPERATURE STABILITY OF CLEAVED HG1-XCDXTE

被引：39

作者：

SILBERMAN, JA ^{[1
]}

MORGEN, P ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] SANTA BARBARA RES CTR,GOLETA,CA 93017

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1116/1.571701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：154 / 156

页数：3

相关论文

共 20 条

[1] Dornhaus R., 1976, SPRINGER TRACTS MODE, V78
[2] VAPORIZATION OF HG1-XCDXTE CRYSTALS - CASE OF GROSS INCONGRUENCY
FARROW, RFC
JONES, GR
WILLIAMS, GM
SULLIVAN, PW
BOYLE, WJO
WOTHERSPOON, JTM
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (10) : L117 - &
[3] FAURIE JP, 1982, J VAC SCI TECHNOL, V21
[4] VACUUM DEPOSITION OF HG0.8CD0.2TE
HOHNKE, DK
HOLLOWAY, H
LOGOTHET.EM
CRAWLEY, RC
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) : 2487 - &
[5] PROBING DEPTH IN PHOTOEMISSION AND AUGER-ELECTRON SPECTROSCOPY
LINDAU, I
SPICER, WE
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (05) : 409 - 413
[6] LONG D, 1970, SEMICONDUCTORS SEMIM, V5
[7] LONG-TERM STABILITY OF CDXHG1-XTE AT 300-K
MICKLETHWAITE, WFH
REDDEN, RF
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 379 - 380
[8] MORGEN P, 1981, ELECTRONIC MATERIALS
[9] LONG-TERM HALL-TYPE CONVERSION BY VACANCY DIFFUSION IN HG1-XCDX TE AT ROOM-TEMPERATURE
NIMTZ, G
SCHLICHT, B
DORNHAUS, R
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 490 - 491
[10] QUASI-SIMULTANEOUS SIMS, AES, XPS, AND TDMS STUDY OF PREFERENTIAL SPUTTERING, DIFFUSION, AND MERCURY EVAPORATION IN CDXHG1-XTE
NITZ, HM
GANSCHOW, O
KAISER, U
WIEDMANN, L
BENNINGHOVEN, A
[J]. SURFACE SCIENCE, 1981, 104 (2-3) : 365 - 383