INTERACTIONS BETWEEN CLEAVED (HG, CD)TE SURFACES AND DEPOSITED OVERLAYERS OF AL AND INDIUM

被引：49

作者：

DAVIS, GD ^{[1
]}

BYER, NE ^{[1
]}

RIEDEL, RA ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.335455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1915 / 1921

页数：7

共 42 条

[1] MECHANISM OF ANODIC-OXIDATION OF HG0.8CD0.2TE
AHEARN, JS
DAVIS, GD
BYER, NE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 756 - 759
[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[3] ADVANCES IN UNDERSTANDING METAL-SEMICONDUCTOR INTERFACES BY SURFACE SCIENCE TECHNIQUES
BRILLSON, LJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (08) : 703 - 733
[4] SYSTEMATICS OF CHEMICAL-STRUCTURE AND SCHOTTKY BARRIERS AT COMPOUND SEMICONDUCTOR METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
KATNANI, AD
STOFFEL, NG
DANIELS, R
MARGARITONDO, G
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 212 - 232
[5] CARLSON TA, 1975, PHOTOELECTRON AUGER, P355
[6] STUDIES OF THE COMPOSITION, ION-INDUCED REDUCTION AND PREFERENTIAL SPUTTERING OF ANODIC OXIDE-FILMS ON HG0.8CD0.2TE BY XPS
CHRISTIE, AB
SUTHERLAND, I
WALLS, JM
[J]. SURFACE SCIENCE, 1983, 135 (1-3) : 225 - 242
[7] Daniels R., UNPUB
[8] CHANGES IN THE LOCAL CHEMICAL-COMPOSITION DURING THE HG1-XCDXTE-AL INTERFACE FORMATION
DANIELS, RR
MARGARITONDO, G
DAVIS, GD
BYER, NE
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 50 - 52
[9] INTERACTION OF THIN-LAYERS OF AL AND GE WITH CLEAVED (HG,CD)TE SURFACES
DAVIS, GD
BYER, NE
DANIELS, RR
MARGARITONDO, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1726 - 1729
[10] DEPOSITION OF AU OVERLAYERS ONTO CLEAVED (HG,CD)TE SURFACES
DAVIS, GD
BECK, WA
BYER, NE
DANIELS, RR
MARGARITONDO, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 546 - 550

← 1 2 3 4 5 →