INTERFACE CHEMISTRY OF TERNARY SEMICONDUCTORS - LOCAL MORPHOLOGY OF THE HG1-XCDXTE(110)-CR INTERFACE

被引：40

作者：

FRANCIOSI, A ^{[1
]}

PHILIP, P ^{[1
]}

PETERMAN, DJ ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.32.8100

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8100 / 8107

页数：8

共 23 条

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[7] DEPOSITION OF AU OVERLAYERS ONTO CLEAVED (HG,CD)TE SURFACES
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[8] ANODIC OXIDE COMPOSITION AND HG DEPLETION AT THE OXIDE-SEMICONDUCTOR INTERFACE OF HG1-XCDXTE
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[10] THE BONDING PROPERTIES OF MERCURY CADMIUM TELLURIDE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1672 - 1673

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