ANISOTROPY OF 2D PLASMONS IN INVERSION-LAYERS ON SI

[1] OBSERVATION OF 2-DIMENSIONAL PLASMON IN SILICON INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (17) : 980 - 983

[2] VALLEY DEGENERACY AND MOBILITY ANISOTROPY UNDER MECHANICAL-STRESS ON (111) SILICON INVERSION LAYERS [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (04) : 429 - 432

[3] ENGLERT T, PREPRINT

[4] ELECTRONIC-STRUCTURE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (15) : 1021 - 1024

[5] SHUBNIKOV HAAS OSCILLATIONS IN N-TYPE INVERSION LAYERS ON (110) AND (111) SURFACES OF SI [J]. PHYSICS LETTERS A, 1975, A 51 (02) : 117 - 118

[6] NAKAYAMA M, 1980, SURF SCI, V98, P358, DOI 10.1016/0039-6028(80)90515-4

[7] NEUGEBAUER T, 1975, SOLID STATE COMMUN, V17, P295, DOI 10.1016/0038-1098(75)90297-5

[8] ELECTRIC BREAK THROUGH IN N-CHANNEL SI INVERSION LAYER TILTED FROM (100) SURFACE [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 45 (04) : 1427 - 1428

[9] SPECTROSCOPIC DETERMINATION OF THE ENERGY GAPS IN THE INVERSION LAYER BAND-STRUCTURE ON VICINAL PLANES OF SI(001) [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (03) : 193 - 196

[10] VALLEY-VALLEY SPLITTING IN INVERSION LAYERS ON A HIGH-INDEX SURFACE OF SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (07) : 472 - 475

[1] OBSERVATION OF 2-DIMENSIONAL PLASMON IN SILICON INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (17) : 980 - 983

[2] VALLEY DEGENERACY AND MOBILITY ANISOTROPY UNDER MECHANICAL-STRESS ON (111) SILICON INVERSION LAYERS [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (04) : 429 - 432

[3] ENGLERT T, PREPRINT

[4] ELECTRONIC-STRUCTURE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (15) : 1021 - 1024

[5] SHUBNIKOV HAAS OSCILLATIONS IN N-TYPE INVERSION LAYERS ON (110) AND (111) SURFACES OF SI [J]. PHYSICS LETTERS A, 1975, A 51 (02) : 117 - 118

[6] NAKAYAMA M, 1980, SURF SCI, V98, P358, DOI 10.1016/0039-6028(80)90515-4

[7] NEUGEBAUER T, 1975, SOLID STATE COMMUN, V17, P295, DOI 10.1016/0038-1098(75)90297-5

[8] ELECTRIC BREAK THROUGH IN N-CHANNEL SI INVERSION LAYER TILTED FROM (100) SURFACE [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 45 (04) : 1427 - 1428

[9] SPECTROSCOPIC DETERMINATION OF THE ENERGY GAPS IN THE INVERSION LAYER BAND-STRUCTURE ON VICINAL PLANES OF SI(001) [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (03) : 193 - 196

[10] VALLEY-VALLEY SPLITTING IN INVERSION LAYERS ON A HIGH-INDEX SURFACE OF SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (07) : 472 - 475