ACCURACY OF WKB APPROXIMATION FOR TUNNELING IN METAL-SEMICONDUCTOR JUNCTIONS

被引：9

作者：

PADOVANI, FA

STRATTON, R

机构：

来源：

关键词：

D O I：

10.1063/1.1652555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：167 / &

共 5 条

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CONLEY, JW ;

MAHAN, GD .

PHYSICAL REVIEW, 1967, 161 (03) :681-+

[2] ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].

CONLEY, JW ;

DUKE, CB ;

MAHAN, GD ;

TIEMANN, JJ .

PHYSICAL REVIEW, 1966, 150 (02) :466-&

[3] TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW [J].

HARRISON, WA .

PHYSICAL REVIEW, 1961, 123 (01) :85-&

[4] DENSITY OF STATES IN METAL-SEMICONDUCTOR TUNNELING [J].

MAHAN, GD ;

CONLEY, JW .

[5] DIFFERENTIAL RESISTANCE PEAKS OF SCHOTTKY BARRIER DIODES [J].

STRATTON, R ;

PADOVANI, FA .