REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF GROWTH AND INTERFACE FORMATION OF THE GA1-XINXSB/INAS STRAINED-LAYER SUPERLATTICES

被引：4

作者：

FAN, WC ^{[1
]}

ZBOROWSKI, JT ^{[1
]}

GOLDING, TD ^{[1
]}

SHIH, HD ^{[1
]}

机构：

[1] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 05期

关键词：

D O I：

10.1063/1.351394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth and interface formation of the Ga1-xInxSb/InAs (x less-than-or-equal-to 0.4) strained-layer superlattices (SLSs) on GaSb(100) substrates have been studied by the reflection high-energy electron diffraction (RHEED) during molecular beam epitaxy. A number of surface atomic structures were observed in the growth of the SLS: a (1 x 3) phases from the InAs epilayer surface; a (2 x 3) phase, a (2 x 4) phase and diffuse (1 x 1)-like phases from the InAs epilayer surface. The RHEED intensity variations in the formation of the interfaces have been discussed in terms of interface chemical reactions.

引用

页码：2249 / 2252

页数：4

共 11 条

[1]

Barin I., 2013, THERMOCHEMICAL PROPE

[2] ELECTRONIC-PROPERTIES OF INAS-GASB SUPER-LATTICES [J].