COMMENT ON DETERMINATION OF VELOCITY-FIELD CHARACTERISTIC FOR N-TYPE INDIUM PHOSPHIDE FROM DIPOLE-DOMAIN MEASUREMENTS

被引：4

作者：

BOERS, PM ^{[1
]}

机构：

[1] NV PHILIPS GLOEILAMPENFABRIEKEN,PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

ELECTRONICS LETTERS | 1973年 / 9卷 / 06期

关键词：

D O I：

10.1049/el:19730099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：134 / 135

页数：2

共 14 条

[1] INDIRECT ELECTRON DRIFT VELOCITY VERSUS ELECTRIC FIELD MEASUREMENT IN GAAS [J].

BASTIDA, EM ;

FABRI, G ;

SVELTO, V ;

VAGHI, F .

APPLIED PHYSICS LETTERS, 1971, 18 (01) :28-+

[2] MEASUREMENTS ON VELOCITY/FIELD CHARACTERISTIC OF INDIUM PHOSPHIDE [J].

BOERS, PM .

ELECTRONICS LETTERS, 1971, 7 (20) :625-+

[3] MEASUREMENTS ON DIPOLE DOMAINS IN INDIUM PHOSPHIDE [J].

BOERS, PM .

PHYSICS LETTERS A, 1971, A 34 (06) :329-+

[4] MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE INP [J].

GLOVER, GH .

APPLIED PHYSICS LETTERS, 1972, 20 (06) :224-&

[5]

GUNN JB, 1965, PLASMA EFFECTS SOLID, P199

[6] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC OF N-INP [J].

HAMMAR, C ;

VINTER, B .

SOLID STATE COMMUNICATIONS, 1972, 11 (05) :751-&

[7]

JAMES LW, 1970, PHYS REV B, V1, P399

[8] SOME MEASUREMENGS OF STEADY-STATE AND TRANSIENT CHARACTERISTICS OF HIGH-FIELD DIPOLE DOMAINS IN GAAS [J].

KURU, I ;

ROBSON, PN ;

KINO, GS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (01) :21-+

[9]

NIELSEN LD, 1972, SOLID STATE COMMUN, V10, P169

[10] MICROWAVE MEASUREMENT OF ELECTRON DRIFT VELOCITY IN INDIUM PHOSPHIDE FOR ELECTRIC-FIELDS UP TO 50 KV/CM [J].

NIELSEN, LD .

PHYSICS LETTERS A, 1972, A 38 (04) :221-&

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