DEFECTS ON THE AG/SI(111)-(ROOT-3X-ROOT-3) SURFACE

被引：15

作者：

MCCOMB, DW

WOLKOW, RA

HACKETT, PA

机构：

[1] Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ont. K1A 0R6

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.50.18268

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the formation of antiphase boundaries on the Ag/Si(111)-(3 × 3) surface using scanning tunneling microscopy (STM). Analysis reveals that the atomic structure across all boundaries is identical, and corresponds to a shift of the silicon trimers between adjacent T4 sites. We can distinguish two types of boundary that although structurally similar exhibit different voltage dependence in STM imaging. It is also shown that the interface between (3 × 3) domains, which are separated vertically by the equivalent of a monatomic step, exhibits unusual contrast in STM images. © 1994 The American Physical Society.

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页码：18268 / 18274

页数：7

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