OXIDATION KINETICS OF POLYDIMENSIONAL SILICON MONOXIDE

被引：4

作者：

HERTL, W

机构：

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1967年 / 71卷 / 12期

关键词：

D O I：

10.1021/j100871a056

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：4090 / &

共 16 条

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HERTL, W ;

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[9] EFFECTS OF OXYGEN PARTIAL PRESSURE ON THE OXIDATION OF SILICON CARBIDE [J].

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WADSWORTH, ME ;

CUTLER, IB .

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[10] OXIDATION OF SILICON CARBIDE [J].

JORGENSEN, PJ ;

WADSWORTH, ME ;

CUTLER, IB .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1959, 42 (12) :613-616

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