ADSORPTION AND DESORPTION-KINETICS OF IN ON SI(100)

被引:33
作者
KNALL, J
BARNETT, SA
SUNDGREN, JE
GREENE, JE
机构
[1] UNIV ILLINOIS,DEPT MED,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
D O I
10.1016/0039-6028(89)90078-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:314 / 334
页数:21
相关论文
共 33 条
[11]   INFLUENCE OF SURFACE PHASE-TRANSITIONS ON DESORPTION-KINETICS - THE COMPENSATION EFFECT [J].
ESTRUP, PJ ;
GREENE, EF ;
CARDILLO, MJ ;
TULLY, JC .
JOURNAL OF PHYSICAL CHEMISTRY, 1986, 90 (17) :4099-4104
[12]  
Glasstone S, 1941, THEORY RATE PROCESSE
[13]   THIN-FILM GROWTH MODES, WETTING AND CLUSTER NUCLEATION [J].
GRABOW, MH ;
GILMER, GH .
SURFACE SCIENCE, 1988, 194 (03) :333-346
[14]   A LOW-ENERGY METAL-ION SOURCE FOR PRIMARY ION DEPOSITION AND ACCELERATED ION DOPING DURING MOLECULAR-BEAM EPITAXY [J].
HASAN, MA ;
KNALL, J ;
BARNETT, SA ;
ROCKETT, A ;
SUNDGREN, JE ;
GREENE, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1332-1339
[15]  
HULTGREN R, 1963, SELECTED VALUES THER
[16]   SECONDARY IMPLANTATION OF SB INTO SI MOLECULAR-BEAM EPITAXY LAYERS [J].
JORKE, H ;
HERZOG, HJ ;
KIBBEL, H .
APPLIED PHYSICS LETTERS, 1985, 47 (05) :511-513
[17]  
KERN R, 1979, CURRENT TOPICS MATER, V3
[18]   INDIUM OVERLAYERS ON CLEAN SI(100)2 X-1 - SURFACE-STRUCTURE, NUCLEATION, AND GROWTH [J].
KNALL, J ;
SUNDGREN, JE ;
HANSSON, GV ;
GREENE, JE .
SURFACE SCIENCE, 1986, 166 (2-3) :512-538
[19]   INDIUM INCORPORATION DURING THE GROWTH OF (100) SI BY MOLECULAR-BEAM EPITAXY - SURFACE SEGREGATION AND RECONSTRUCTION [J].
KNALL, J ;
SUNDGREN, JE ;
GREENE, JE ;
ROCKETT, A ;
BARNETT, SA .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :689-691
[20]  
KNALL J, IN PRESS SURFACE SCI