TEMPERATURE-DEPENDENT LIFETIME DISTRIBUTION OF THE PHOTOLUMINESCENCE S-BAND IN POROUS SILICON

被引：52

作者：

MAUCKNER, G

THONKE, K

BAIER, T

WALTER, T

SAUER, R

机构：

[1] Abteilung Halbleiterphysik, Universität Ulm

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.355999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the recombination mechanism of the visible photoluminescence (PL) S-band in p-doped porous Si layers by time-resolved photoluminescence. From the observed ''stretched-exponential'' PL decays we present a simple yet accurate evaluation method for lifetime distributions G(tau) and average recombination lifetimes [tau]. The average lifetimes feature a strong temperature dependence and a characteristic thermal activation energy of 10-20 meV for low temperatures. Our results are discussed within the models of quantum-confined exciton recombination and surface state recombination.

引用

页码：4167 / 4170

页数：4

共 19 条

[1] ADRIANOV AV, 1992, JETP LETT, V56, P236
[2] COMPARISON OF ROOM-TEMPERATURE PHOTOLUMINESCENCE DECAYS IN ANODICALLY OXIDIZED CRYSTALLINE AND X-RAY-AMORPHOUS POROUS SILICON
BUSTARRET, E
MIHALCESCU, I
LIGEON, M
ROMESTAIN, R
VIAL, JC
MADEORE, F
[J]. JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 105 - 109
[3] IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON
CALCOTT, PDJ
NASH, KJ
CANHAM, LT
KANE, MJ
BRUMHEAD, D
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) : L91 - L98
[4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
CANHAM, LT
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
[5] LUMINESCENCE DECAY IN DISORDERED LOW-DIMENSIONAL SEMICONDUCTORS
CHEN, X
HENDERSON, B
ODONNELL, KP
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (21) : 2672 - 2674
[6] ELECTRONIC-ENERGY TRANSFER ON FRACTALS
EVEN, U
RADEMANN, K
JORTNER, J
MANOR, N
REISFELD, R
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (24) : 2164 - 2167
[7] ON THE RELATIONSHIP AMONG 3 THEORIES OF RELAXATION IN DISORDERED-SYSTEMS
KLAFTER, J
SHLESINGER, MF
[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1986, 83 (04) : 848 - 851
[8] KOCH F, 1993, MAT RES S C, V283, P197, DOI 10.1557/PROC-283-197
[9] KOHLRAUSCH F, 1863, POGG ANN PHYSIK, V119, P352
[10] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT
LEHMANN, V
GOSELE, U
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (08) : 856 - 858

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