DYNAMIC SPICE-SIMULATION OF THE ELECTROTHERMAL BEHAVIOR OF SOI MOSFETS

被引:25
作者
BIELEFELD, J
PELZ, G
ABEL, HB
ZIMMER, G
机构
[1] FRAUNHOFER INST MICROELECTR CIRCUITS & SYST,D-47057 DUISBURG,GERMANY
[2] ROBERT BOSCH GMBH,DIV AUTOMOT EQUIPMENT,REUTLINGEN,GERMANY
关键词
D O I
10.1109/16.469405
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A nonlinear dynamic electrothermal model of the SOI MOSFET is implemented and can be used in SPICE3. This model is formulated as a set of algebraic and (partial) differential equations which is converted into a SPICE3 netlist automatically by a model translator, Neither the simulator is rewritten nor SPICE device models are implemented or changed, In this way, the presented approach supports effectively model development. To show the electrothermal interaction the SOI MOSFET model is applied to several static and dynamic simulations. The SPICE-simulation results of the thermal model are verified with the commercial finite-element simulator ANSYS(R).
引用
收藏
页码:1968 / 1974
页数:7
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