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METAL D-LEVEL INDUCED MID-GAP FERMI LEVEL PINNING ON GAAS(110)

被引：6
作者：
MCLEAN, AB
WILLIAMS, RH
MCGILP, JF
机构：
[1] UNIV WALES UNIV COLL CARDIFF,DEPT PHYS,CARDIFF CF1 1XL,S GLAM,WALES
[2] UNIV DUBLIN TRINITY COLL,DEPT PURE & APPL PHYS,DUBLIN 2,IRELAND
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词：
D O I：
10.1116/1.584245
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1252 / 1256
页数：5
相关论文
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