HOT-ELECTRON RELIABILITY AND ESD LATENT DAMAGE

被引：38

作者：

AUR, S

CHATTERJEE, A

POLGREEN, T

机构：

[1] Texas Instruments Inc, Dallas, TX,, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期

关键词：

D O I：

10.1109/16.8793

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2189 / 2193

页数：5

共 11 条

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CHEN KL, 1986, IEDM

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[6] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].

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MAES, HE ;

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DEKEERSMAECKER, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53

[7]

HOLMES GC, 1985, EOS ESD S P

[8]

HU CM, 1985, IEEE J SOLID-ST CIRC, V20, P295

[9]

KHURANA N, 1985, IEEE IRPS P, P212

[10] HOT-CARRIER EFFECTS IN SUBMICROMETER MOS VLSIS [J].

TAKEDA, E .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1984, 131 (05) :153-162

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