REAL-TIME OBSERVATION OF ATOMIC ORDERING IN (001) IN0.53GA0.47AS EPITAXIAL LAYERS

被引：34

作者：

PHILIPS, BA

KAMIYA, I

HINGERL, K

FLOREZ, LT

ASPNES, DE

MAHAJAN, S

HARBISON, JP

机构：

[1] CARNEGIE MELLON UNIV, DEPT MAT SCI & ENGN, PITTSBURGH, PA 15213 USA

[2] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA

[3] BELLCORE, RED BANK, NJ 07701 USA

[4] N CAROLINA STATE UNIV, DEPT PHYS, RALEIGH, NC 27695 USA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.74.3640

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first real-time observation of atomic ordering in a semiconductor alloy during epitaxial growth. (001) In0.53Ga0.47As layers deposited below about 400°C exhibit a strong anisotropy in the broadening parameters of the E1,E11 transitions that is observable with reflectance-difference spectroscopy. This unusual optical behavior results from intraband mixing driven by triple-period ordering along both [111] and [111»] directions simultaneously. This microstructure is realizable with stoichiometry In0.556Ga0.444As virtually identical to that needed to lattice match InP. © 1995 The American Physical Society.

引用

页码：3640 / 3643

页数：4

共 23 条

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