VERTICAL BRIDGMAN GROWTH OF CD1-YZNYTE AND CHARACTERIZATION OF SUBSTRATES FOR USE IN HG1-XCDXTE LIQUID-PHASE EPITAXY

被引：46

作者：

BRUDER, M ^{[1
]}

SCHWARZ, HJ ^{[1
]}

SCHMITT, R ^{[1
]}

MAIER, H ^{[1
]}

MOLLER, MO ^{[1
]}

机构：

[1] UNIV WURZBURG,INST PHYS,W-8700 WURZBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90979-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The manufacturing of Cd1-yZnyTe single crystral is demonstrated using the unseeded vertical Bridgman growth method. 〈111〉 or substrates are prepared, characterized, and used for growth of low defect Hg1-xCdx liquid phase epitaxial layers. © 1989.

引用

页码：266 / 269

页数：4

共 12 条

[1]

Bartels W. J., 1983, Philips Technical Review, V41, P183

[2]

DINAN JH, 1985, APPL PHYS LETT, V47, P1066

[3] COMPARISON OF DISLOCATION DENSITIES OF PRIMARY AND SECONDARY RECRYSTALLIZATION GRAINS OF SI-FE [J].