EFFECT OF MECHANICAL-STRESS ON THE ABSORPTION-BAND TAIL IN POLYCRYSTALLINE DIAMOND FILMS

被引:11
作者
CHATTOPADHYAY, KK
DUTTA, J
CHAUDHURI, S
PAL, AK
机构
[1] Department of Materials Science, Indian Association for the Cultivation of Science, Calcutta
关键词
DIAMOND FILMS; OPTICAL PROPERTIES; POLYCRYSTALLINE DIAMOND;
D O I
10.1016/0925-9635(94)00233-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond films were deposited by plasma deposition of acetylene (1-5 vol.%) and hydrogen mixture on different substrates (Si, mica and quartz). The films were polycrystalline in nature, as revealed by transmission electron microscopy studies. Optical properties of the films were studied in the wavelength range 0.18-2 mu m. Both direct and indirect transitions were found to be present in these films. The mechanical stress at the grain boundary region of diamond film seems to contribute significantly towards the optical absorption below the bandgap. The intercrystalline barrier height E(b) and trap state density Q(t) were obtained from the analysis of the grain boundary effects on the optical properties of the material.
引用
收藏
页码:122 / 127
页数:6
相关论文
共 25 条
[1]   DIAMOND AND DIAMOND-LIKE FILMS [J].
ANGUS, JC .
THIN SOLID FILMS, 1992, 216 (01) :126-133
[2]  
BENARDEZ L, 1992, J APPL PHYS, V72, P200
[3]  
BHATTACHARYYA D, 1993, VACUUM, V24, P797
[4]   ABSORPTION-EDGE OF CDS THIN-FILMS [J].
BUJATTI, M ;
MARCELJA, F .
THIN SOLID FILMS, 1972, 11 (02) :249-&
[5]   TOWARD A UNIFIED THEORY OF URBACHS RULE AND EXPONENTIAL ABSORPTION EDGES [J].
DOW, JD ;
REDFIELD, D .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :594-+
[6]   ELECTROABSORPTION IN SEMICONDUCTORS - EXCITONIC ABSORPTION EDGE [J].
DOW, JD ;
REDFIELD, D .
PHYSICAL REVIEW B, 1970, 1 (08) :3358-&
[7]   OPTICAL-PROPERTIES OF DIAMOND-LIKE TRANSITIONAL FILMS PRODUCED BY DC-PLASMA DEPOSITION OF ACETYLENE [J].
DUTTA, D ;
CHATTOPADHYAY, KK ;
DUTTA, J ;
CHAUDHURI, S ;
PAL, AK .
MATERIALS LETTERS, 1993, 18 (03) :114-118
[8]   ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF POLYCRYSTALLINE CUBIC SEMICONDUCTORS [J].
GAVRILENKO, VI .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 139 (02) :457-466
[9]   A THIN-FILM SCHOTTKY DIODE FABRICATED FROM FLAME-GROWN DIAMOND [J].
GLESENER, JW ;
MORRISH, AA ;
SNAIL, KA .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) :5144-5146
[10]   DIAMOND DEPOSITION ON SILICON SURFACES HEATED TO TEMPERATURE AS LOW AS 135-DEGREES-C [J].
IHARA, M ;
MAENO, H ;
MIYAMOTO, K ;
KOMIYAMA, H .
APPLIED PHYSICS LETTERS, 1991, 59 (12) :1473-1475