ON THE USE OF ZINC ACETATE AS A NOVEL PRECURSOR FOR THE DEPOSITION OF ZNO BY LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：32

作者：

KHAN, OFZ ^{[1
]}

OBRIEN, P ^{[1
]}

机构：

[1] UNIV LONDON QUEEN MARY COLL,DEPT CHEM,MILE END RD,LONDON E1 4NS,ENGLAND

来源：

THIN SOLID FILMS | 1989年 / 173卷 / 01期

关键词：

D O I：

10.1016/0040-6090(89)90541-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：95 / 97

页数：3

共 10 条

[1] MASS-SPECTRA OF TETRACOBALT(II) AND TETRAZINC(II) MU4-OXO-HEXA-MU-CARBOXYLATES (BASIC COBALT AND ZINC CARBOXYLATES) [J].

CHARALAMBOUS, J ;

COPPERTHWAITE, RG ;

JEFFS, SW ;

SHAW, DE .

INORGANICA CHIMICA ACTA, 1975, 14 (01) :53-58

[2]

FORZO VF, 1969, INORG MATER+, V5, P304

[3]

Koyama H., 1954, B CHEM SOC JPN, V27, P112

[4] GROWTH OF EPITAXIAL ZNO THIN-FILMS BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].

LAU, CK ;

TIKU, SK ;

LAKIN, KM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :1843-1847

[5] HIGHLY CONDUCTIVE AND TRANSPARENT ZNO THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING IN AN APPLIED EXTERNAL DC MAGNETIC-FIELD [J].

MINAMI, T ;

NANTO, H ;

TAKATA, S .

THIN SOLID FILMS, 1985, 124 (01) :43-47

[6]

MISUK A, 1981, THIN SOLID FILMS, V76, P83

[7] ZINC CHALCOGENIDE THIN-FILMS GROWN BY THE ATOMIC LAYER EPITAXY TECHNIQUE USING ZINC ACETATE AS SOURCE MATERIAL [J].

TAMMENMAA, M ;

KOSKINEN, T ;

HILTUNEN, L ;

NIINISTO, L ;

LESKELA, M .

THIN SOLID FILMS, 1985, 124 (02) :125-128

[8] CONDUCTION MECHANISM IN SPUTTERED POLYCRYSTALLINE ZINC-OXIDE THIN-FILMS [J].

TANSLEY, TL ;

NEELY, DF ;

FOLEY, CP .

THIN SOLID FILMS, 1984, 117 (01) :19-32

[9]

WATANABE M, 1970, JPN J APPL PHYS, V9, P418

[10] THE USE OF HETEROCYCLIC-COMPOUNDS IN THE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL ZNS, ZNSE AND ZNO [J].

WRIGHT, PJ ;

GRIFFITHS, RJM ;

COCKAYNE, B .

JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) :26-34

← 1 →