GROWTH OF CDTE AND HG-BASED ALLOYS BY CHEMICAL-BEAM EPITAXY

被引：12

作者：

BENZ, RG

WAGNER, BK

SUMMERS, CJ

机构：

[1] Physical Sciences Division, Georgia Tech Research Institute, Atlanta

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.576999

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A chemical-beam epitaxial system designed specifically for the growth of Hg-based materials is described. Preliminary results on CdTe, HgTe, and HgZnTe growth are presented. © 1990, American Vacuum Society. All rights reserved.

引用

页码：1020 / 1024

页数：5

共 13 条

[1] PROPERTIES OF UNDOPED AND SB-DOPED CDTE SURFACES PREPARED BY CONVENTIONAL AND PHOTO-ASSISTED MOLECULAR-BEAM EPITAXY [J].

BENSON, JD ;

RAJAVEL, D ;

WAGNER, BK ;

BENZ, R ;

SUMMERS, CJ .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :543-546

[2] PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

GILES, NC ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1735-1737

[3]

BOUKERCHE M, 1986, APPL PHYS LETT, V48, P1973

[4]

BOUKERCHE M, 1988, J VAC SCI TECHNOL A, V6, P2380

[5] ROLE OF ATOMIC TELLURIUM IN THE GROWTH-KINETICS OF CDTE (111) HOMOEPITAXY [J].

CHEUNG, JT .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1940-1942

[6] DOPING OF GAAS IN METALORGANIC MBE USING GASEOUS SOURCES [J].

HEINECKE, H ;

WERNER, K ;

WEYERS, M ;

LUTH, H ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :270-275

[7] P-ON-N HETEROJUNCTIONS OF (HG,CD)TE BY MOLECULAR-BEAM EPITAXY - CONTROLLED SILVER DOPING AND COMPOSITIONAL GRADING [J].

PETERMAN, DJ ;

WROGE, ML ;

MORRIS, BJ ;

LEOPOLD, DJ ;

BROERMAN, JG .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (06) :1951-1954

[8]

RAJAVEL D, 1989, IN PRESS 10TH MBE WO

[9] EXIT LOSS IN VISCOUS TUBE FLOW [J].

SANTELER, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1986, 4 (03) :348-352

[10] PROPERTIES OF HG1-XZNX TE GROWN BY LIQUID-PHASE EPITAXY [J].

SHER, A ;

EGER, D ;

ZEMEL, A ;

FELDSTEIN, H ;

RAIZMAN, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2024-2027

← 1 2 →