PROPERTIES OF HG1-XZNX TE GROWN BY LIQUID-PHASE EPITAXY

被引：37

作者：

SHER, A

EGER, D

ZEMEL, A

FELDSTEIN, H

RAIZMAN, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.574020

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2024 / 2027

页数：4

共 15 条

[1]

DORNHAUS R, 1983, SPRINGER TRACTS MODE, V98, P179

[2]

EIDZIUNAS G, 1980, 5TH POL SUZK ZAPR ZA, V1, P86

[3]

FAURIE JP, 1985, UNPUB 1985 US WORKSH, P53

[4] INFRARED OPTICAL-ABSORPTION OF HG1-XCDXTE [J].

FINKMAN, E ;

NEMIROVSKY, Y .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4356-4361

[5] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].

HANSEN, GL ;

SCHMIT, JL ;

CASSELMAN, TN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7099-7101

[6]

LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175

[7] GROWTH AND PROPERTIES OF HG1-XCDXTE EPITAXIAL LAYERS [J].

NEMIROVSKY, Y ;

MARGALIT, S ;

FINKMAN, E ;

SHACHAMDIAMAND, Y ;

KIDRON, I .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :133-153

[8]

PHILLIPS JC, 1973, BONDS BANDS SEMICOND, P54

[9] ELECTRICAL AND FAR-INFRARED OPTICAL-PROPERTIES OF P-TYPE HG-1-XCD-XTE [J].

SCOTT, W ;

STELZER, EL ;

HAGER, RJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1408-1414

[10] MERCURY ZINC TELLURIDE EPILAYERS GROWN BY LPE [J].

SHER, A ;

EGER, D ;

ZEMEL, A ;

FELDSTEIN, H ;

RAIZMAN, A .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :108-110

← 1 2 →