GROWTH AND PROPERTIES OF HG1-XCDXTE EPITAXIAL LAYERS

被引：59

作者：

NEMIROVSKY, Y

MARGALIT, S

FINKMAN, E

SHACHAMDIAMAND, Y

KIDRON, I

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 01期

关键词：

D O I：

10.1007/BF02654613

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：133 / 153

页数：21

共 15 条

[1]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[2] COMPARISON OF HG0.6CD0.4TE LPE LAYER GROWTH FROM TE-RICH, HG-RICH, AND HGTE-RICH SOLUTIONS [J].

BOWERS, JE ;

SCHMIT, JL ;

SPEERSCHNEIDER, CJ ;

MACIOLEK, RB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :24-28

[3] EFFECTS OF ANNEALING ON HG0.79CD0.21 TE EPILAYERS [J].

CHU, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5876-5879

[4]

HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272

[5] LIQUIDUS ISOTHERMS, SOLIDUS LINES AND LPE GROWTH IN THE TE-RICH CORNER OF THE HG-CD-TE SYSTEM [J].

HARMAN, TC .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (06) :945-961

[6]

HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[7] ENERGY BANDGAP AND LATTICE-CONSTANT CONTOURS OF 2-6 QUATERNARY ALLOYS [J].

IDO, T .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (05) :869-882

[8] LIQUID-PHASE EPITAXIAL-GROWTH OF ZNTE AND ZN1-XCDXTE [J].

KANAMORI, A ;

OTA, T ;

TAKAHASHI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1117-1122

[9]

MURANEVICH A, UNPUB J CRYST GROWTH

[10]

REYNOLDS BRA, 1970, PHYSICS SEMIMETALS N

← 1 2 →