RESIDUAL-STRESSES AND FRACTURE PROPERTIES OF MAGNETRON-SPUTTERED TI FILMS ON SI MICROELEMENTS

被引:59
作者
LJUNGCRANTZ, H
HULTMAN, L
SUNDGREN, JE
JOHANSSON, S
KRISTENSEN, N
SCHWEITZ, JA
SHUTE, CJ
机构
[1] UNIV UPPSALA,DEPT TECHNOL,DIV MAT SCI,S-75121 UPPSALA,SWEDEN
[2] LINKOPING UNIV,DEPT MECH ENGN,DIV ENGN MAT,S-58183 LINKOPING,SWEDEN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 03期
关键词
D O I
10.1116/1.578770
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The influence of different deposition parameters on the microstructure, the residual stress, and the mechanical properties of thin Ti films has been investigated. Ti films were deposited onto Si (001) wafers with a native oxide layer, held at a temperature <250-degrees-C, by dc magnetron sputtering. The film thickness was 1 mum. The microstructure of the films, as determined by x-ray diffraction (XRD) and transmission electron microscopy (TEM), was varied by changing the Ar sputtering pressure P(Ar) between 0.8 and 8.3 mTorr, and by applying a negative substrate bias V(s) between 0 and 300 V. The residual stresses in the films were determined by both a beam curvature technique and the XRD sin2 psi method. For V(s) = 0, the residual stress in the films changed abruptly from tensile to compressive as P(Ar) decreased below 2.5 mTorr. A maximum tensile stress of 0.4 GPa was obtained at 3 mTorr. The compressive stress reached at P(Ar) = 0.8 mTorr was 0.4 GPa. TEM showed accompanying structural changes from columnar structure with a high amount of voids in the grain boundaries to a dense structure at P(Ar) = 0.8 mTorr. For P(Ar) = 3 mTorr, where the largest tensile stress was obtained, the application of a negative substrate bias resulted in Ar ion bombardment that caused compressive stresses to develop for V(s) > 75 V and a stress saturation value of 0.6 GPa was reached for V(s) > 100 V. TEM showed a dense film structure for V(s) > 75 V. The primary energetic particles bombarding the surface were, Ti atoms in the absence of an applied bias and Ar+ ions for sputtering with an applied bias. The energy of the energetic particle in each case was a function of the deposition condition and for both stress transitions, the energy was shown to be of approximately the same magnitude, approximately 15 eV/deposited Ti atom. The Young's modulus of the Ti film was experimentally estimated, and found in fair agreement with previously reported bulk data. Fracture tests were performed on Ti-coated Si cantilever beams in situ in a scanning electron microscope. The fracture strength of coated cantilever beams were typically 10%-15% lower than that of uncoated beams.
引用
收藏
页码:543 / 553
页数:11
相关论文
共 62 条
[1]  
ARMSTRON.RW, 1968, T METALL SOC AIME, V242, P2513
[2]   INTERNAL-STRESS AND INTERNAL-FRICTION IN THIN-LAYER MICROELECTRONIC MATERIALS [J].
BERRY, BS ;
PRITCHET, WC .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) :3661-3668
[3]   A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].
BIERSACK, JP ;
HAGGMARK, LG .
NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269
[4]   STRESS AND RESISTIVITY CONTROL IN SPUTTERED MOLYBDENUM FILMS AND COMPARISON WITH SPUTTERED GOLD [J].
BLACHMAN, AG .
METALLURGICAL TRANSACTIONS, 1971, 2 (03) :699-&
[5]   CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].
BRANTLEY, WA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535
[6]  
CABBERLY WH, 1980, METALS HDB, V3, P357
[7]  
Chapman B., 1980, GLOW DISCHARGE PROCE
[8]  
CHAUDHARI P, 1971, J VAC SCI TECHNOL, V9, P520
[9]   NOTE ON THE ORIGIN OF INTRINSIC STRESSES IN FILMS DEPOSITED VIA EVAPORATION AND SPUTTERING [J].
DHEURLE, FM ;
HARPER, JME .
THIN SOLID FILMS, 1989, 171 (01) :81-92
[10]  
DIRHS AG, 1977, THIN SOLID FILMS, V47, P219